Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure
- Journal
- IEEE Electron Device Letters
- Year
- 2016
Gwang-Sik Kim, Gwangwe Yoo, Yu Jin Seo, Seung-Hwan Kim, Byung Jin Cho, Changhwan Shin, Jin-Hong Park, and Hyun-Yong Yu, "Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure", IEEE Electron Device Letters, vol. 37, no. 6, pp. 709-712, Jun. 2016.