H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs
- Journal
- IEEE Electron Device Letters
- Vol
- 40 (9)
- Page
- 1350-1353
- Year
- 2019
Tae In Lee, Manh-Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang , Hyun-Young Yu, Rino Choi , and Byung Jin Cho, "H2 high pressure annealed Y-doped ZrO2 gate dielectric with an EOT of 0.57 nm for Ge MOSFETs", IEEE Electron Device Letters, vol. 40, no. 9, pp. 1350-1353, Sep. 2019.