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Heterogeneous 3-D Sequential CFET with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs
Journal
IEEE Transactions on Electron Devices
Author
Seong Kwang Kim, Hyeong-Rak Lim, Jaejoong Jeong, Seung Woo Lee, Juhyuk Park, Joon Pyo Kim, Jaeyong Jeong, Bong Ho Kim, Seung-Yeop Ahn, Youngkeun Park, Dae-Myoung Geum, Younghyun Kim, Yongku Baek, Byung Jin Cho , Sanghyeon Kim
Year
2023
Date
21 November 2023

Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs, has been ACCEPTED for publication in the IEEE Transactions on Electron Devices.  The issue date is conditional on the prompt return of the verified galley proof.