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Total 15건 1 페이지

2026
15

"Improvement of VT Stability of In2O3 Thin-Film Transistors Using Lanthanum Oxide Interfacial Layer" Donguk Park, Youngkeun Park, Heetae Kim, Eun Pyo Jang, Geonhee Shin, Sang-Hee Ko Park, and Byung Jin Cho, IEEE Electron Device Letters, Accepted.
14

"Asymmetric Memory Window Recovery Benaviorin n / p-FeFETs Revealed by Trap Analysis" Bong Ho Kim, Song-Hyeon Kuk, Hyeon-Seong Hwang, Jaeyong Jeong, Youngkeun Park, Yoon-Je Suh, Joon Pyo Kim, Chan Jik Lee, Seong Kwang Kim, Dae-Myeong Geum, Byung Jin Cho, and Sang Hyeon Kim, IEEE Transactions on Device and Materials Reliability, September 2026.
13

"Performance-Optimized TeOX/β-Ga2O3 Heterojunction Diodes with Low Turn-on Voltage" Dongbin Kim, Dahee Seo, Jongsu Baek, Yunseo Park, Hyoung Woo Kim, Byung Jin Cho, IEEE Transactions on Electron Devices, September 2026.
12

"Nucleation-to-Propagation Switching Modes in Ferroelectric Hf0.5Zr0.5O2 Capacitors" Batzorig Buyantogtokh, Sheung Hun Kim, Hoon Kim, Byung Jin Cho, Uwe Schroeder, Seungbum Hong, NANO Letters, 2026 June.
11

"High-Pressure Deuterium Annealing Effect on HfO2-Based Gate-All-Around Ferroelectric FET" Min-Jae Choi , Ju-Won Yeon, Ji-Man Yu , Myungsoo Seo, Min-Ho Kang , Sheung Hun Kim , Byung Jin Cho, Jun-Young Park , and Yang-Kyu Choi, IEEE Electron Device Letters, June 2026.
10

"Enhanced Disturbance Immunity in Ferroelectric FETs Using La-doped HfO2 Film" Sheung Hun Kim, Youngkeun Park, Batzorig Buyantogtokh, Jaejoong Jeong, Chanmi Yu, Seungbum Hong and Byung Jin Cho, IEEE Electron Device Letters, June 2026.
9

"Dynamic electro-thermal circuit modeling for vertical NiO/β-Ga2O3 p-n diodes" Yunyeong Choi, Youngkwan Cho, Dongbin Kim, Byung Jin Cho, Myunghun Shin, Microelectronics Reliability, 182, 116157, May 2026.
8

"Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer" Dongbin Kim, Jongsu Baek, Daehyun Kang, Dahee Seo, Wookyung Jeon, Youngkwan Cho, Hyoung Woo Kim, Myunghun Shin, Yohan Yoon, Byung Jin Cho, Applied Physics Letters, 128, 153901, April 2026.
7

"Barrier Engineering of Silicon-Doped Boron Nitride in the Charge Trap Layer for High Performance 3D V-NAND Flash Memory" Dae Hyun Kang, Jaejoong Jeong, Youngkeun Park, Dong Hun Sin, Han Mei Choi and Byung Jin Cho, IEEE Transactions on Electron Devices, 73, 2730 - 2734, March 2026.
6

"Thermally Stable, Low-Resistance Source/Drain Contacts in a-IGZO TFTs Using an Indium Interlayer" Hoseok Lee, Heetae Kim, Heesu Kim, Chihun Sung, Jeho Na, Bada Kim, Sung Haeng Cho, and Byung Jin Cho, IEEE Electron Device Letters, 47, 937 - 940, March 2026.
5

"Robust Disturb Immunity in AND-Type 1T FeFET Arrays by Electron De-trapping Mode" Bong Ho Kim, Song-Hyeon Kuk, Hyeon-Seong Hwang, Jaeyong Jeong, Youngkeun Park, Yoon-Je Suh, Joon Pyo Kim, Chan Jik Lee, Byung Jin Cho, and Sang Hyeon Kim, IEEE Transactions on Electron Devices, 73, 1798 - 1801, February 2026.
4

"Improvement of Performance and Reliability of Polysilicon Cell Transistors in Flash Memory Using Initiated CVD Fluorine Doping" Youngkeun Park, Jeong-Ik Park, Jaejoong Jeong, Sung-Jin Chang, Sejun Park, Sung Gap Im and Byung Jin Cho, IEEE Transactions on Electron Devices, 73, 1816 - 1824, February 2026.
3

"Memory Window Enhancement with Germanium-Incorporated Charge Trap Layer in Flash Memory Device" Geonhee Shin, Youngkeun Park, Jaejoong Jeong, Heetae Kim, and Byung Jin Cho, IEEE Journal of the Electron Devices Society, 14, 122 - 126, February 2026.
2

"High-Detectivity ZnO-based Ultraviolet Photodetector with Asymmetric Al2O3 Interlayer" Yoonho Choi, Dongbin Kim, Jongsu Baek, Hwa Young Kim, Yongki Kim, Sang-Hee Ko Park, Myunghun Shin, and Byung Jin Cho, IEEE Transactions on Electron Devices, 73, 1455 - 1460, January 2026.
1

"A Novel Read disturbance-free AND-type Backside Ferroelectric Field Effect Transistor (BF-FET) array for Read-intensive Artificial Intelligence" Jaejoong Jeong, Yeeun Kim, Youngkeun Park, Yeong Kwon Kim, Byung Chul Jang, Jong Kyung Park, and Byung Jin Cho, IEEE Transactions on Electron Devices, 73, 1346 - 1351, February 2026.

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