Abstract

 High-performance and reliable polysilicon (poly-Si) channel devices were achieved by heavy fluorine (F) doping via initiated chemical vapor deposition (iCVD) technology. A large amount of F was introduced throughout the entire thickness of the poly-Si channel as well as the poly-Si /tunnel oxide interface, which effectively passivates grain boundary-related defects and interface traps. The diffused F in the poly-Si channel not only enhances the transistor characteristics but also provides the highly reliable properties. In addition, charge trap flash (CTF) memory devices with an iCVD F-doped poly-Si channel achieve a faster program/erase operation and better endurance compared to the conventional hydrogen (H)-passivated poly-Si channel CTF memory devices, due to the formation of robust Si-F bonds and the accumulation of F at the poly-Si/tunnel oxide interface.