Abstract

 This work demonstrates robust disturb immunity in AND-type 1T FeFET arrays enabled by the electron de-trapping (ED) mode. The ED mode suppresses hole injection from the body and induces sharp ferroelectric switching. Consequently, the ED mode significantly reduces write disturb and achieves complete immunity to read disturb, with stable memory states maintained up to 1010 disturb cycles. These results underscore the ED mode as a robust device-level strategy to enhance disturb immunity in FeFET arrays, paving the way toward reliable embedded non-volatile memory applications.