Abstract 

 This work presents indium interlayer insertion at the source/drain contacts of amorphous In–Ga–Zn–O (a-IGZO) TFTs to improve thermal stability under high temperatures to up 450°C. The indium interlayer not only effectively suppresses specific contact resistivity (ρC) degradation after a high temperature annealing but also further reduces it. The fabricated a-IGZO TFTs with the indium interlayer as a contact buffer in the source/drain contacts could maintain their electrical properties without any degradation even after post annealing at a temperature of 450°C.