ABSTRACT 

 In this work, a NiO/β-Ga₂O₃ heterojunction diode with an ultrathin (2nm) amorphous boron nitride (a-BN) interfacial layer (IL) is presented. The NiO/a-BN/β-Ga₂O₃ heterojunction diode exhibited a lower turn-on voltage and a higher forward current, thereby reducing the power dissipation, compared to the NiO/β-Ga₂O₃ diode without an a-BN IL. It is also found that the a-BN IL reduces the interface states, leading to the improvement of the operational reliability after bias stress and reverse blocking characteristics.