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Enhanced Disturbance Immunity in Ferroelectric FETs Using La-doped HfO2 Film
Journal
IEEE Electron Device Letters
Author
Sheung Hun Kim, Youngkeun Park, Batzorig Buyantogtokh, Jaejoong Jeong, Chanmi Yu, Seungbum Hong and Byung Jin Cho
Year
2026
Date
June 2026
Abstract
 In this work, we introduce La-doped HfO2 (HLO) as a ferroelectric layer to replace the conventional HfZrO2 (HZO). Compared to HZO, HLO shows a higher remanent polarization (Pr), with a 2Pr of 47.8 μC/cm². In addition, field- and time-dependent measurements confirm that switched polarization (Psw) of HLO shows a steeper increment than that of HZO, which is attributed to a narrow domain switching distribution. As a result, HLO-FeFETs achieve a 16.0% wider memory window (MW) and reduced threshold voltage (VT) shifts under disturb cycling, compared to HZO-FeFETs. These results indicate that HLO is a promising candidate to overcome the disturbance issues in FeFETs.