Abstract

 It is demonstrated that the use of a lanthanum oxide (LaOx) interfacial layer enhances the threshold voltage stability of indium oxide (In₂O₃) thin-film transistors (TFTs). This improvement is attributed to the effective passivation of oxygen vacancies (Vₒ) at the channel/gate dielectric interface by La, which reduces the average interface trap density (NT) by over 90%. Consequently, In2O3 TFTs with a LaOx interfacial layer exhibit a decreased subthreshold swing (SS) as low as 65.3 mV/decade and demonstrate enhanced bias stability under positive bias stress (PBS) and negative bias illumination stress (NBIS).