In-situ Hafnium capping process for 0.6 nm EOT on Ge wafer
- Year
- 2014
- Author
- 정원일, 신윤상, 이충호, 손동균, 조병진
- Conference
- 21th Korean Conference on Semiconductors
정원일, 신윤상, 이충호, 손동균, 조병진, "In-situ Hafnium capping process for 0.6 nm EOT on Ge wafer", 21th Korean Conference on Semiconductors, Seoul, Korea, Feb 24-26, 2014.
Feb 24-26, 2014.
Seoul, Korea