Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations
- Year
- 2012
- Author
- Jong Kyung Park, Dong-Il Moon, Yang-Kyu Choi, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho
- Conference
- International Electron Devices Meeting (IEDM 2012) pp. 2.4.1 - 2.4.4
Jong Kyung Park, Dong-Il Moon, Yang-Kyu Choi, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho, "Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations", , International Electron Devices Meeting (IEDM 2012), pp. 2.4.1 - 2.4.4, San Francisco, USA, December 10-13, 2012.
December 10-13, 2012.
San Francisco, USA