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Total 378건 18 페이지

2007
123

"Doping of Al-catalyzed Vapor-liquid-solid Grown Si Nnanowires" S. J. Whang, S. J. Lee, W. F. Yang, H. C. Zhu, H. L. Gu, B. J. Cho and Y. F. Liew, 2007 MRS Spring Meeting, 2007
122

"Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics"," W. F. Yang, S. J. Whang, S. J. Lee, H.C. Zhu, H.L. Gu, B. J. Cho,, 2007 MRS Spring Meeting, 2007
121

"Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices" G. K. Dalapati, Y. Tong, W. Y. Loh, and B. J. Cho, 2007 MRS Spring Meeting, 2007
120

"Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET" S. J. Whang, S. J. Lee, W. F. Yang, H. C. Zhu, B. J. Cho, and Y, F. Liew,, 211th Electrochemical Society Meeting, 2007
119

"Fabrication and characterization of 65nm gate length p-MOSFET integrated with bottom up grown Si nanowire" W. F. Yang, S. J. Whang, S. J. Lee*, H. C. Zhu, and B. J. Cho, 211th Electrochemical Society Meeting, 2007
118

"Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices" H.Zang, W. Y. Loh, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo and B. J. Cho,, 211th Electrochemical Society Meeting, 2007
117

"The effect of Interfacial Layer of High-K Dielectrics on GaAs Substrate" Y. Tong, G. K. Dalapati, H. J. Oh and B. J. Cho, 211th Electrochemical Society Meeting, 2007
116

"GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy" H. J. Oh, K. J. Choi, W. Y. Loh, T. Htoo, S. J. Chua, and B. J. Cho, 211th Electrochemical Society Meeting, 2007
115

"Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel" H.Zang, C. K. Chua, W. Y. Loh, and B.J. Cho, 211th Electrochemical Society Meeting, 2007
114

"Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire" S. J. Whang, S. J. Lee, W. F. Yang, B. J. Cho, Y. F. Liew, D. L. Kwong, IEEE-Nanotech 2007., 2007
113

"Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm Technology and Beyond" S. Suthram, P. Majhi, G. Sun, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, M. M. Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. H. Tseng, R. Jammy,, International Electron Device Meeting (IEDM) 2007, 2007
112

"Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application" G. Zhang, W. S. Hwang, S. M. Bobade, S. H. Lee, B. J. Cho, and W. J. Yoo, International Electron Device Meeting (IEDM) 2007, 2007
111

"Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process" Byung Jin Cho, Wan Sik Hwang, and Daniel S. H. Chan, IEEE 4th International Symposium on Advanced Gate Stack Technology, 2007
110

"Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform" J. Wang, W. Y. Loh, H. Zang, M. B. Yu, K.T. Chua, T. H. Loh, J. D. Ye, R. Yang, X. L. Wang, S. J. Lee, B. J. Cho, G. Q. Lo, and D. L. Kwong, Group IV Photonics conference, 2007
109

"High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack" W. F. Yang, S. J. Lee, S. J. Whang, S. Y. Lim, B. J. Cho and D. L. Kwong, SSDM 2007, 2007

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