Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application
- Year
- 2007
- Author
- G. Zhang, W. S. Hwang, S. M. Bobade, S. H. Lee, B. J. Cho, and W. J. Yoo
- Conference
- International Electron Device Meeting (IEDM) 2007
G. Zhang, W. S. Hwang, S. M. Bobade, S. H. Lee, B. J. Cho, and W. J. Yoo,“Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application”, International Electron Device Meeting (IEDM) 2007, Dec., 2007, San Francisco, USA.
Dec., 2007
San Francisco, USA.