Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel
- Year
- 2007
- Author
- H.Zang, C. K. Chua, W. Y. Loh, and B.J. Cho
- Conference
- 211th Electrochemical Society Meeting
H.Zang, C. K. Chua, W. Y. Loh, and B.J. Cho, "Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.
May, 2007.
Chicago