Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
- Year
- 2007
- Author
- H.Zang, W. Y. Loh, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo and B. J. Cho,
- Conference
- 211th Electrochemical Society Meeting
H.Zang, W. Y. Loh, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo and B. J. Cho, "Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.
May, 2007.
Chicago