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Total 378건 19 페이지

2007
108

"Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon" H. Zang, W. Y. Loh, J. D. Ye, T. H. Loh, G. Q. Lo, and B. J. Cho, SSDM 2007., 2007
107

"Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping" C. Shen, J. Pu, M. F. Li, and B. J. Cho, IEEE 2nd International conference on memory technology and design, 2007
106

"A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices" L. Zhang, W. He, D. S. H. Chan, and B. J. Cho, IEEE 2nd International conference on memory technology and design, 2007
105

"A novel Hafnium Carbide Metal Gate Electrode for NMOS Device Application" W. S. Hwang, C. Shen, X. P. Wang, D. S. H. Chan, and B. J. Cho,, 2007 Symposium on VLSI Technology, 2007
2006
104

"Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack" C. S. Park, S. C. Song, G. Bersuker, H. N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, 2006 International Conference on Solid State Devices and Materials (SSDM 2006), 2006
103

"Effects of Low Energy Nitrogen Plasma on the Removal of HfSiON" W. S. Hwang, W. J. Yoo, B. J. Cho, and D. S. H. Chan, AVS 53rd International Symposium, 2006
102

"Study on nonvolatile byproducts generated during etching of advanced gate stacks" W. S. Hwang, B. J. Cho, D. S. H. Chan, and W. J. Yoo,, 28th International Symposium on Dry Process,, 2006
101

"Damage free etching of RuO2 in O2/He plasma," W. S. Hwang, V. N. Bliznetsov, B. J. Cho, D. S. H. Chan, and W. J. Yoo,, 28th International Symposium on Dry Process, 2006
100

"Application of High-ĸ dielectrics to MIM capacitors for RF/analog CMOS Devices" B. J. Cho and S. J. Kim,, SEMICON Korea 2006 SEMI Technology Symposium,, 2006
99

"Integration of high-K gate dielectric into high mobility substrate" B. J. Cho,, 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES SCIENCE AND TECHNOLOGY, 2006
2005
98

"Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability" C. C. Yeo, B. J. Cho, H. Yeo, F. Gao, S. J. Lee, C. Y. Yu, C. W. Liu, and L. J. Tang,, 3rd International Conference on Materials for Advanced Technologies, Symposium H, 2005
97

"Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application" B. J. Cho, S. J. Kim, M. F. Li, C. Zhu, A. Chin, M. B. Yu, Y. Z. Xiong, and D. L. Kwong, 3rd International Conference on Materials for Advanced Technologies, Symposium H, 2005
96

"Dual metal gate process scheme for wide range work function modulation and reduced Fermi level pinning" B. J. Cho, C. S. Park, P. W. Lwin, S. Y. Wong, J. Pu, W. S. Hwang, L. J. Tang, W. Y. Loh, and D. L. Kwong,, 3rd International Conference on Materials for Advanced Technologies, Symposium H, 2005
95

"Role of Si in Fermi-level pinning phenomena in metal/high-K dielectric gate stack" M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, 3rd International Conference on Materials for Advanced Technologies, Symposium H, 2005
94

"Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET" D.Poon, L. S. Tan, B. J. Cho, A. Y. Du, and L. Chan, 3rd International Conference on Materials for Advanced Technologies, Symposium H, 2005

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