A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices
- Year
- 2007
- Author
- L. Zhang, W. He, D. S. H. Chan, and B. J. Cho
- Conference
- IEEE 2nd International conference on memory technology and design
L. Zhang, W. He, D. S. H. Chan, and B. J. Cho,“A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices”, IEEE 2nd International conference on memory technology and design, p. 223-226, Giens, France, May, 2007.
May, 2007.
Giens, France