B. J. Cho, S. J. Kim, M. F. Li, C. Zhu, A. Chin, M. B. Yu, Y. Z. Xiong, and D. L. Kwong, "Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 10, MRS Singapore, July 2005.