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Total 31건 2 페이지

2003
16

"Channel mobility behaviour in high-K/metal gate NMOSFETs" S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, 2nd International Conference on Materials for Advanced Technologies, 2003
15

"Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film" M.Balasubramanian, L. K. Bera, S. Mathew, V. Lim, M. S. Joo, and B. J. Cho, 2nd International Conference on Materials for Advanced Technologies, 2003
14

"Germanium MOS capacitors with ultra thin HfO2 gate dielectric" Q. C. Zhang, C. Zu, N. Wu, A. Chin, M. F. Li, B. J. Cho, L. K. Bera, and D. L. Kwong,, 2nd International Conference on Materials for Advanced Technologies,, 2003
13

"New reliability issues of CMOS transistors with 1.3 nm gate oxide" M. F. Li, B. J. Cho, G. Chen, W. Y. Loh, D. L. Kwong, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 2003
12

"Progressive breakdown statistics in ultra-thin silicon dioxides" W. Y. Loh, B. J. Cho, M. F. Li, Daniel S. H. Chan, C. H. Ang, Z. J. Zhen, and D. L. Kwong, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2003
11

"Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics" C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, 2003 Symposium on VLSI Technology, 2003
10

"HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications" S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong,, 2003 Symposium on VLSI Technology, Digest of Technical Papers, 2003
9

"A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer" C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, 2003 Symposium on VLSI Technology, Digest of Technical Papers, 2003
8

"MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source" M. S. Joo, B. J. Cho, C. C. Yeo, S. J. Whoang, S. Matthew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, 2003 International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, 2003
7

"Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool" C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whoang, D. L. Kwong, L. K. Bera, S. Mathew, N. Balasubramanian, International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, 2003
6

"New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz" A. Chin, P. Mei, C. Zhu, M.-F. Li, S. Lee, W. J. Yoo, B. J. Cho and D. L. Kwong, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, 2003
5

"Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application" H. Hang, S. J. Ding, C. Zhu, S. C. Rustagi, Y. F. Lu, M. F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Chin, D. L. Kwong, International semiconductor device research symposium, 2003
4

"Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs." C. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. Zhu, M. F. Li, B. J. Cho, D. L.Kwong,, International Electron Device Meeting (IEDM), 2003
3

"Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction" C. Zhu, H. Hu, X. F. Yang, S. J. Kim, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, International Electron Device Meeting (IEDM), 2003
2

"High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications" H.Hu, S. J. Ding, H. F. Lim, C. Zhu, M. F. Li, S. J. Kim, X. F. Xu, J. H. Chen, Y. F. Yong, B. J. Cho, D. S. H. Chan, S. Rustagi, M. F. Yu, C. H. Tung, A. Y. Du, P. D. Foo, A. Chin, D. L. Kwong,, International Electron Device Meeting (IEDM), 2003

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