Record Memory Window (12.2 V) and Superior QLC Retention (10 year, 85℃) by Gate Stack Engineering in Ferroelectric FET: from "MIFIS" to "MIKFIS"
- Year
- 2024
- Author
- Song-Hyeon Kuk
- Co-author
- Bong Ho Kim, Youngkeun Park, Kyul Ko, Hyeon-Seong Hwang, Dae-Hye Lee, Byung Jin Cho, Jae-Hoon Han, and Sang-Hyeon Kim
- Conference
- 2024 International Electron Devices Meeting (IEDM)
Song-Hyeon Kuk1, Bong Ho Kim1, Youngkeun Park1, Kyul Ko2, Hyeon-Seong Hwang1, Dae-Hye Lee1, Byung Jin Cho1, Jae-Hoon Han2, and Sang-Hyeon Kim1
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea;
2Korea Institute of Science and Technology, Seoul, Republic of Korea. *Email: shkim.ee@kaist.ac.kr