High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation
- Year
- 2004
- Author
- Y. N. Tan, W. K. Chim, W. K. Choi, J. M. Sig, N. T. Hau and B. J. Cho,
- Conference
- International Electron Device Meeting (IEDM)
Y. N. Tan, W. K. Chim, W. K. Choi, J. M. Sig, N. T. Hau and B. J. Cho, "High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation", International Electron Device Meeting (IEDM), Dec. 2004, San Francisco, USA.
Dec. 2004
San Francisco, USA.