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Total 378건 22 페이지

2003
63

"Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process" C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies,, 2003
62

"ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application" H. Y. Yu, N. Wu, C. Yeo, M. S. Joo, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003
61

"Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface" S. J. Kim, B. J. Cho, H. F. Lim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003
60

"Channel mobility behaviour in high-K/metal gate NMOSFETs" S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, 2nd International Conference on Materials for Advanced Technologies, 2003
59

"Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film" M.Balasubramanian, L. K. Bera, S. Mathew, V. Lim, M. S. Joo, and B. J. Cho, 2nd International Conference on Materials for Advanced Technologies, 2003
58

"Germanium MOS capacitors with ultra thin HfO2 gate dielectric" Q. C. Zhang, C. Zu, N. Wu, A. Chin, M. F. Li, B. J. Cho, L. K. Bera, and D. L. Kwong,, 2nd International Conference on Materials for Advanced Technologies,, 2003
57

"New reliability issues of CMOS transistors with 1.3 nm gate oxide" M. F. Li, B. J. Cho, G. Chen, W. Y. Loh, D. L. Kwong, 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, 2003
56

"Progressive breakdown statistics in ultra-thin silicon dioxides" W. Y. Loh, B. J. Cho, M. F. Li, Daniel S. H. Chan, C. H. Ang, Z. J. Zhen, and D. L. Kwong, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2003
55

"Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics" C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, 2003 Symposium on VLSI Technology, 2003
54

"HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications" S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong,, 2003 Symposium on VLSI Technology, Digest of Technical Papers, 2003
53

"A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer" C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, 2003 Symposium on VLSI Technology, Digest of Technical Papers, 2003
52

"MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source" M. S. Joo, B. J. Cho, C. C. Yeo, S. J. Whoang, S. Matthew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, 2003 International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, 2003
51

"Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool" C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whoang, D. L. Kwong, L. K. Bera, S. Mathew, N. Balasubramanian, International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, 2003
50

"New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz" A. Chin, P. Mei, C. Zhu, M.-F. Li, S. Lee, W. J. Yoo, B. J. Cho and D. L. Kwong, Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering, 2003
49

"Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application" H. Hang, S. J. Ding, C. Zhu, S. C. Rustagi, Y. F. Lu, M. F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Chin, D. L. Kwong, International semiconductor device research symposium, 2003

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