Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics
- Year
- 2003
- Author
- C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong
- Conference
- 2003 Symposium on VLSI Technology
C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, "Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics", 2003 Symposium on VLSI Technology, pp. 119, Kyoto, Japan, June 2003.
June 2003.
Kyoto, Japan