ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application
- Year
- 2003
- Author
- H. Y. Yu, N. Wu, C. Yeo, M. S. Joo, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong
- Conference
- 2nd International Conference on Materials for Advanced Technologies
H. Y. Yu, N. Wu, C. Yeo, M. S. Joo, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, "ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application", 2nd International Conference on Materials for Advanced Technologies, p. 562, MRS Singapore, December 2003.
December 2003.
MRS Singapore