Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
- Year
- 2003
- Author
- C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong
- Conference
- 2nd International Conference on Materials for Advanced Technologies,
C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process", 2nd International Conference on Materials for Advanced Technologies, p. 519, MRS Singapore, December 2003.
December 2003.
MRS Singapore