Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs.
- Year
- 2003
- Author
- C. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. Zhu, M. F. Li, B. J. Cho, D. L.Kwong,
- Conference
- International Electron Device Meeting (IEDM)
C. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. Zhu, M. F. Li, B. J. Cho, D. L.Kwong, "Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs." International Electron Device Meeting (IEDM), Dec., 2003, Washington, USA.
Dec., 2003
Washington, USA.