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Total 378건 24 페이지

2000
33

"A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide" C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), 2000
32

"Gate oxide reliability concern associated with X-ray lithography" B. J. Cho, S. J. Kim, C. H. Ang, C. H. Ling, M. S. Joo, and I. S. Yeo, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), 2000
1999
31

"Design of lateral OGBT protection circuit for smart power integration" J. Y. Luo, Y. C. Liang, and B. J. Cho, 1999 International Conf. on Power Electronics and Drive System,, 1999
30

"Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions" B. J. Cho, S. J. Kim, C. H. Ling, M. S. Joo, and I. S. Yeo, 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), 1999
29

"A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique" H. Guan, B. J. Cho, M. F. Li, Y. D. He, Z. Xu, and Z. Dong, 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), 1999
28

"Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure" J. M. P. Yue, W. K. Chim, B. J. Cho, W. H. Qin, D. S. H. Chan, Y. B. Kim, S. A. Jang, and I. S. Yeo,, 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 94, IEEE, 1999
27

"Integrity of gate oxides irradiated under electron-beam lithography conditions" P. F. Chong, B. J. Cho, E. F. Chor, M. S. Joo, and I. S. Yeo, 1999 International Conf. on Solid State Devices and Materials (SSDM), 1999
26

"Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique" H. Guan, M. F. Li, Y. Zhang, B. J. Cho, B. B. Jie, J. Xie, J. L. F. Wang, A. C. Yen, G. T. T. Sheng, Z. Dong, and W. Li, 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, 1999
25

"A study of quasi-breakdown mechanism in ultra thin gate oxide under various types of stress" H. Guan, Z. Xu, B. J. Cho, M. F. Li, and Y. D. He,, Materials Research Society (MRS) 1999 Fall Meeting Symp, 1999
24

"Roles of primary hothole and FN electron fluences in gate oxide breakdown" M. F. Li, Y. D. He, S. G. Ma, B. J. Cho, K. F. Lo, and M. Z. Xu, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, 1999
23

"Investigation of quasi-breakdown mechanism in ultrathin gate oxides" Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong, Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, 1999
1998
22

"Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate" L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan, Asia-Pacific SIA'98 Conference, pp. Mi-P-18, 1998
21

"The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process" L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan, Proc. of 1998 IEEE Hong Kong Electron Devices Meeting,, 1998
20

"Design of IGBT gate drive with SOA consideration" J.Luo, Y. C. Liang, and B. J. Cho, IEEE Power Electronics Drives and Energy systems for Industrial Growth (PEDES), 1998
1997
19

"Annealing behavior of a double MeV implanted silicon" N. H. Cho, T. H. Huh, Y. T. Jang, J. S. Ro, K. H. Lee, B. J. Cho, and J. C. Kim,, Proc. of the 11th International Conf. on Ion Implantation Technology,, 1997

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