The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process
- Year
- 1998
- Author
- L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan
- Conference
- Proc. of 1998 IEEE Hong Kong Electron Devices Meeting,
L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan, "The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process", Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp. 32, IEEE, Hong Kong, Aug. 1998.
Aug. 1998.
Hong Kong