Quasi-breakdown of ultra thin gate oxide under high field stress
- Year
- 1994
- Author
- S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi
- Conference
- IEEE International Electron Devices Meeting (IEDM) Technical Digest
S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, "Quasi-breakdown of ultra thin gate oxide under high field stress", IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 605, IEEE, San Francisco, USA, , Dec. 1994.
Dec. 1994.
San Francisco, USA,