Effect of in-situ P doped polysilicon on gate oxide (I) - yield degradation
- Year
- 1994
- Author
- J. U. Lim, B. J. Cho, Y. J. Park, J. C. Kim, and S. H. Choi
- Conference
- 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies
J. U. Lim, B. J. Cho, Y. J. Park, J. C. Kim, and S. H. Choi, "Effect of in-situ P doped polysilicon on gate oxide (I) - yield degradation", Extended Abstract of the 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp. 664, Kawasaki, Japan, March 1994.
March 1994.
Kawasaki, Japan