New breakdown mechanism of ultra thin gate oxides under ballistic transport
- Year
- 1994
- Author
- S. H. Lee, M. S. Joo, B. J. Cho, Y. J. Park, and J. C. Kim
- Conference
- 1st Korean Semiconductor Tech. Symp., pp. 179
S. H. Lee, M. S. Joo, B. J. Cho, Y. J. Park, and J. C. Kim, "New breakdown mechanism of ultra thin gate oxides under ballistic transport", Proc. of the 1st Korean Semiconductor Tech. Symp., pp. 179, KITE & KIEE, Kyungju, Korea, Feb. 1994.
Feb. 1994.
Kyungju, Korea