Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding
- Year
- 2022
- Author
- Seong Kwang Kim
- Co-author
- Hyeong-Rak Lim, Jaejoong Jeong, Seung Woo Lee, Joon Pyo Kim, Jaeyoung Jeong, Bong Ho Kim, Dae-Myoung Geum, Younghyun Kim, Yongku Baek, Byung Jin Cho, and Sang Hyeon Kim
- Conference
- IEEE International Electron Devices Meeting (IEDM)
Seong Kwang Kim, Hyeong-Rak Lim, Jaejoong Jeong, Seung Woo Lee, Joon Pyo Kim, Jaeyoung Jeong, Bong Ho Kim, Dae-Myoung Geum, Younghyun Kim, Yongku Baek, Byung Jin Cho, and Sang Hyeon Kim, "Hybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding," IEEE International Electron Devices Meeting, December 03-07, 2022.