Channel Mobility Boosting through Ge profile and grain size engineering in a Ge-diffused Poly-Si channel for 3D V-NAND Flash Memory
- Year
- 2022
- Author
- Tae In Lee
- Co-author
- Yun Hee Lee, Eui Joong Shin, Min Ju Kim, Jung Hoon Lee, Jaeduk Lee, and Byung Jin Cho
- Conference
- The 29th Korean Conference on Semiconductors
Tae In Lee, Yun Hee Lee, Eui Joong Shin, Min Ju Kim, Jung Hoon Lee, Jaeduk Lee, and Byung Jin Cho, "Channel Mobility Boosting through Ge profile and grain size engineering in a Ge-diffused Poly-Si channel for 3D V-NAND Flash Memory", The 29th Korean Conference on Semiconductors, Kangwondo, Korea, January 24-26. 2022.