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Total 378건 4 페이지

2021
333

"Electric-field-cycling-induced phase transformation method to obtain morphotropic phase boundary in HfxZr1-xO2" Seongho Kim, Seung Hwan Lee, Wan Sik Hwang, Woo Young Park, and Byung Jin Cho, European Materials Research Society, 2021
332

"Human and artificial intelligence for hyper-connectivity : now and future, Flash memory 소자에서 Anti-Ferroelectric 물질을 이용한 capacitance 부스팅" Sung Won Shin, Eui Joong Shin, and Byung Jin Cho, IEIE Invited talk, 2021
2020
331

"Long-term retention and low power OTFT-NVMs with hydroxyl group charge trapping layer via ultrathin iCVD dielectric." 이창현, 박관용, 최준환, 김민주, 조병진, 임성갑, 한국고분자학회 2020년도 추계총회 및 학술대회, 2020
330

"Experimental results of a prototype rapid thermal annealing system" B. J. Cho, K. T. Kim, and C. K. Kim, Conf. on CAD, Semiconductor Material and Components, 2020
329

"High Quality N+/P Junction of Ge Substrate Prepared by initiated CVD Doping Process" Jae Hwan Kim, Sung Won Shin, Tae In Lee, Wan Sik Hwang, and Byung Jin Cho, 2020 Symposia on VLSI Technology and Circuits, 2020
328

"Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2" Sung Won Shin, Eui Joong Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Wan Sik Hwang, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
327

"Leakage current Improvement of Anti-ferroelectric capacitor with Bottom electrode annealing" Seung Hwan Lee, Seong Ho Kim, Hyun Jun Ahn, Tae Ho Kim, Sung Won Shin, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
326

"Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack" Tae In Lee, Manh-Cuong Nguyen, Min Ju Kim, Hyun Jun Ahn, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho, The 27th Korean Conference on Semiconductors, 2020
325

"Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device" Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Jae Hwan Kim, Wan Sik Hwang, Jaeduk Lee, and Byung Jin Cho, 2020 IEEE International Electron Devices Meeting (IEDM), 2020
324

"Low Temperature and Ion-Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo-Sensor Circuits" Hoonhee Han, Rino Choi, Seong-Ook Jung, Sung Woo Chung, Byung Jin Cho, S. C. Song, and Changhwan Choi, IEEE International Electron Devices Meeting (IEDM), 2020
2019
323

"Y 도핑된 ZrO2 고유전율 박막을 이용한 0.67 nm의 EOT와 매우 낮은 누설 전류를 가지는 Ge 기반 게이트 구조" Tae In Lee, Min Ju Kim, Hyun Jun Ahn, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho, The 26th Korean Conference on Semiconductors, 2019
322

"기상합성 고유전율 하이브리드 절연막" Min Ju Kim, Kwanyong Pak, Tae In Lee, Sung Gap Im, and Byung Jin Cho, The 26th Korean Conference on Semiconductors, 2019
321

"MoS2 charge trap memory cell 특성 평가" Eui Joong Shin, Yi Rang Lim, Jongsun Lim, Wan Sik Hwang, and Byung Jin Cho, The 26th Korean Conference on Semiconductors, 2019
320

"Reliability Improvement of Charge Trap Flash Memory Cell with Sealing Oxide in Fluorine Incorporation" Seung Hwan Lee, Tae Yoon Lee, Hyun Jun Ahn, Tae In Lee, Eui Joong Shin, Sung Won Shin, and Byung Jin Cho, The 26th Korean Conference on Semiconductors, 2019
319

"Vapor-Phase Synthesis of Organic-Inorganic Hybrid Gate Dielectric for Flexible Electronics" Min Ju Kim; Kwanyong Pak; Wan Sik Hwang; Sung Gap Im; Byung Jin Cho, 2019 MRS Spring Meeting & Exhibit, Materials Research Society, 2019

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