Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack
- Year
- 2020
- Author
- Tae In Lee, Manh-Cuong Nguyen, Min Ju Kim, Hyun Jun Ahn, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho
- Conference
- The 27th Korean Conference on Semiconductors
Tae In Lee, Manh-Cuong Nguyen, Min Ju Kim, Hyun Jun Ahn, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Young Yu, and Byung Jin Cho, "Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack", The 27th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 12-14. 2020.
Feburary 12-14. 2020.
Kangwondo, Korea