MoS2 charge trap memory cell 특성 평가
- Year
- 2019
- Author
- Eui Joong Shin, Yi Rang Lim, Jongsun Lim, Wan Sik Hwang, and Byung Jin Cho
- Conference
- The 26th Korean Conference on Semiconductors
Eui Joong Shin, Yi Rang Lim, Jongsun Lim, Wan Sik Hwang, and Byung Jin Cho, "MoS2 charge trap memory cell 특성 평가", The 26th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2019.
Feb. 13-15, 2019.
Kangwondo, Korea