A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide
- Year
- 2000
- Author
- C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho
- Conference
- Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM)
C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho, "A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide", Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp. 254, The Japan Society of Applied Physics, Sendai, Japan, Aug. 2000.
Aug. 2000.
Sendai, Japan