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Total 31건 1 페이지

2003
31

"A comparative study of multiple and single pulse laser annealing for ultrashallow boron junction formation" D.Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See,, Ultra-Shallow Junctions-2003 Workshop,, 2003
30

"Process optimization for multiple-pulse laser annealing of boron implanted silicon with germanium pre-amorphization" D.Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See, 2003 MRS Spring Meeting, MRS Symposium D: CMOS Front-End Materials and Process Technology, 2003
29

"Photoluminescene from silicon nanocrystals formed by pulsed laser deposition" X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, W. D. Song, H. Hu, MRS Symposium, 2003
28

"Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas" X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, H. Hu, MRS Symposium Proceedings Vol. 762, 2003
27

"Material and electrical characterization of HfO2 films for MIM capacitors applications" H.Hu, C. Zhu, Y. F. Lu, J. N. Zeng, Y. H. Wu, Y. F. Liew, M. F. Li, B. J. Cho, W. K. Choi, MRS Spring meeting,, 2003
26

"Growth and characterization of hafnium oxide thin films prepared by MOCVD" C. S. Fong, V. L. S. Wei, R. G. Krishnam, A. Trigg, L. K. Bera, S. Mathew, N. Balasubramanian, M. S. Joo, C. C. Yeo, and B. J. Cho, 2003 International conference on Characterisation and Metrology for ULSI technology, 2003
25

"MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications" X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu,, MRS Spring meeting, 2003
24

"Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors" N. Wu, C. Zhu, N. Balasubramanian, C. C. Yeo, M. S. Joo, H. Y. Yu, Q. C. Zhang, L. K. Bera, B. J. Cho, M. F. Li, S. J. Whoang, 2nd International Conference on Materials for Advanced Technologies,, 2003
23

"Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application" H. F. Lim, S. J. Kim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, B. J. Cho, C. Zhu, A. Chin, D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003
22

"Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence" M. S. Joo, B. J. Cho, C. C. Yeo, Y. L. Ching, W. Y. Loh, S. J. Whoang, S. Mathew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003
21

"Effect of annealing on the composition and structure of HfO2 and nitrogen incorporated HfO2" C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whang, D. L. Kwong, L. K. Bera, S. Mathew, N. Balasubramanian, 2nd International Conference on Materials for Advanced Technologies, 2003
20

"Electrical evaluation of laser annealed junctions by Hall measurement" D. C. H. Poon, B. J. Cho, L. S. Tan, M. Bhat, and L. Chan,, 2nd International Conference on Materials for Advanced Technologies, 2003
19

"Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process" C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies,, 2003
18

"ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application" H. Y. Yu, N. Wu, C. Yeo, M. S. Joo, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003
17

"Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface" S. J. Kim, B. J. Cho, H. F. Lim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong, 2nd International Conference on Materials for Advanced Technologies, 2003

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