Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface
- Year
- 2003
- Author
- S. J. Kim, B. J. Cho, H. F. Lim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong
- Conference
- 2nd International Conference on Materials for Advanced Technologies
S. J. Kim, B. J. Cho, H. F. Lim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong, "Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface", 2nd International Conference on Materials for Advanced Technologies, p. 513, MRS Singapore, December 2003.
December 2003.
MRS Singapore