Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence
- Year
- 2003
- Author
- M. S. Joo, B. J. Cho, C. C. Yeo, Y. L. Ching, W. Y. Loh, S. J. Whoang, S. Mathew, L. K. Bera, N. Balasubramanian, and D. L. Kwong
- Conference
- 2nd International Conference on Materials for Advanced Technologies
M. S. Joo, B. J. Cho, C. C. Yeo, Y. L. Ching, W. Y. Loh, S. J. Whoang, S. Mathew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, "Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence", 2nd International Conference on Materials for Advanced Technologies, p. 517, MRS Singapore, December 2003.
December 2003.
MRS Singapore