Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application
- Year
- 2003
- Author
- H. F. Lim, S. J. Kim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, B. J. Cho, C. Zhu, A. Chin, D. L. Kwong
- Conference
- 2nd International Conference on Materials for Advanced Technologies
H. F. Lim, S. J. Kim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, B. J. Cho, C. Zhu, A. Chin, D. L. Kwong, "Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application", 2nd International Conference on Materials for Advanced Technologies, p. 532, MRS Singapore, December 2003.
December 2003.
MRS Singapore