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Total 11건 1 페이지

2004
11

"Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization" B. J. Cho, D. Poon, L. S. Tan, M. Bhat, A. See, IEEE 4th International Workshop on Junction Technology (IWJT-2004),, 2004
10

"Dual Metal and fully silicided metal gate processes with tunable workfunction" B. J. Cho, International NanoElectronics Materials Conference,, 2004
9

"Dual metal gate CMOS with tunable work function and high-K gate dielectrics" B. J. Cho, The 1st International Workshop on Nanoscale Semiconductor Devices, 2004
8

"Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs" S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, M. B. Yu, C. Zhu, A. Chin, and D. L.Kwong, 2004 Symposium on VLSI Technology, 2004
7

"A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics" S. J. Ding, H. Hu, C. Zhu, S. J. Kim, M. F. Li, B. J. Cho, A. Chin, and D. L. Kwong, Internaional Conference on Solid State and Integrated Circuit Technology (ICSICT), 2004
6

"Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature ProcessI" M. S. Joo, B. J. Cho, D. Z. Chi, N. Balasubramanian, and D. L. Kwong,, International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, 2004
5

"Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer" C. S. Park, B. J. Cho, L. J. Tang, W. Wang, and D. L. Kwong,, International Conf. on Solid State Devices and Materials (SSDM),The Japan Society of Applied Physics, 2004
4

"High performance RF MOSFETs and passive devices on Si" A. Chin, C. H. Lai, Z. M. Lai, C. F. Lee, C. Zhu, M. F. Li, B. J. Cho, and D. L.Kwong, 2004 Asia-Facific Microwave Conference, 2004
3

"Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies (Invited)" B. J. Cho, S. J. Kim, M. F. Li, and M. B. Yu, 2004 Asia-Facific Microwave Conference, 2004
2

"High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation" Y. N. Tan, W. K. Chim, W. K. Choi, J. M. Sig, N. T. Hau and B. J. Cho,, International Electron Device Meeting (IEDM), 2004
1

"Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free" C. S. Park, B. J. Cho, L. J. Tang, and D. L. Kwong, International Electron Device Meeting (IEDM), 2004

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