Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free
- Year
- 2004
- Author
- C. S. Park, B. J. Cho, L. J. Tang, and D. L. Kwong
- Conference
- International Electron Device Meeting (IEDM)
C. S. Park, B. J. Cho, L. J. Tang, and D. L. Kwong, "Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free", International Electron Device Meeting (IEDM), December 2004, San Francisco, USA.
December 2004
San Francisco, USA.