High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application
- Year
- 2005
- Author
- S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, A. Chin, and D. L. Kwong
- Conference
- 2005 Symposium on VLSI Technology
S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, A. Chin, and D. L. Kwong, "High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application", 2005 Symposium on VLSI Technology, pp. 56-57, Kyoto, Japan, June 2005.
June 2005.
Kyoto, Japan