Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability
- Year
- 2005
- Author
- C. C. Yeo, B. J. Cho, H. Yeo, F. Gao, S. J. Lee, C. Y. Yu, C. W. Liu, and L. J. Tang,
- Conference
- 3rd International Conference on Materials for Advanced Technologies, Symposium H
C. C. Yeo, B. J. Cho, H. Yeo, F. Gao, S. J. Lee, C. Y. Yu, C. W. Liu, and L. J. Tang, "Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 13, MRS Singapore, July 2005.
July 2005.
MRS Singapore
