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The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate 
Year
2008 
Author
W.-Y.Loh, P.Majhi, S.-H.Lee,J.-W.Oh, B.Sassman, C.Young, G.Bersuker, B.J.Cho, C.-S.Park, C.-Y.Kang, P.Kirsch, B.-H.Lee, H.R.Harris, H.-H.Tseng, R.Jammy 
Conference
2008 Symposium on VLSI Technology 

W.-Y.Loh, P.Majhi, S.-H.Lee,J.-W.Oh, B.Sassman, C.Young, G.Bersuker, B.J.Cho, C.-S.Park, C.-Y.Kang, P.Kirsch, B.-H.Lee, H.R.Harris, H.-H.Tseng, R.Jammy, "The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate", 2008 Symposium on VLSI Technology, pp56-57, Honolulu, USA, Jun., 2008.


Jun., 2008.
Honolulu, USA