SONOS Type Memory Cell with ALD LaAlO Blocking Oxide for High Speed Operation
- Year
- 2008
- Author
- W. He, D. S.H. Chan, and B. J. Cho
- Conference
- The 9th International Conference on Solid-State and Integrated-Circuit Technology
W. He, D. S.H. Chan, and B. J. Cho, “SONOS Type Memory Cell with ALD LaAlO Blocking Oxide for High Speed Operation”. The 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China, Oct., 2008.
Oct., 2008.
Beijing, China