Field Effect Transistor With A Physical Gap Graphene Channel For Digital Logic Device With High On/Off Current Ratio
- Year
- 2011
- Author
- Jeong Hun Mun, Byung Jin Cho
- Conference
- Nature conference - Graphene : The Road to Applications
Jeong Hun Mun, Byung Jin Cho, "Field Effect Transistor With A Physical Gap Graphene Channel For Digital Logic Device With High On/Off Current Ratio", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.
May 11-13. 2011.
Boston, USA