Enhancement of High temperature Data Retention by La2O3-Doped Nitride for Charge-Trap Type Flash Memory Device
- Year
- 2011
- Author
- Jong Kyung Park, Youngmin Park, Seok-Hee Lee, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho
- Conference
- 18th Korean Conference on Semiconductors
Jong Kyung Park, Youngmin Park, Seok-Hee Lee, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho, "Enhancement of High temperature Data Retention by La2O3-Doped Nitride for Charge-Trap Type Flash Memory Device", 18th Korean Conference on Semiconductors, Jeju, Korea, Feb. 2011.
Feb. 2011.
Jeju, Korea